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NB3N502 датащи(PDF) 3 Page - ON Semiconductor |
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NB3N502 датащи(HTML) 3 Page - ON Semiconductor |
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3 / 5 page ![]() NB3N502 http://onsemi.com 3 Table 5. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Units VDD Positive Power Supply GND = 0 V 7 V VI Input Voltage GND – 0.5 = VI = VDD + 0.5 V TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 0 LFPM 500 LFPM SOIC−8 SOIC−8 190 130 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) (Note 1) SOIC−8 41 to 44 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. JEDEC standard multilayer board − 2S2P (2 signal, 2 power). Table 6. DC CHARACTERISTICS (VDD = 3 V to 5.5 V unless otherwise noted, GND = 0 V, TA = −40°C to +85°C) (Note 2) Symbol Characteristic Min Typ Max Unit IDD Power Supply Current (unloaded CLKOUT operating at 100 MHz with 20 MHz crystal) 20 mA VOH Output HIGH Voltage IOH = −25 mA TTL High 2.4 V VOL Output LOW Voltage IOL = 25 mA 0.4 V VIH Input HIGH Voltage, CLK only (pin 1) (VDD / 2) + 1 VDD / 2 V VIL Input LOW Voltage, CLK only (pin 1) VDD / 2 (VDD / 2) −1 V VIH Input HIGH Voltage, S0, S1 VDD – 0.5 V VIL Input LOW Voltage, S0, S1 0.5 V VIM Input level of S1 when open (Input Mid Point) VDD ÷ 2 V Cin Input Capacitance, S0, S1 4 pF ISC Output Short Circuit Current ± 70 mA 2. Parameters are guaranteed by characterization and design, not tested in production. Table 7. AC CHARACTERISTICS (VDD = 3 V to 5.5 V unless otherwise noted, GND = 0 V, TA = −40°C to +85°C) (Note 3) Symbol Characteristic Min Typ Max Unit fXtal Crystal Input Frequency 5 27 MHz fCLK Clock Input Frequency 2 50 MHz fOUT Output Frequency Range VDD = 4.5 to 5.5 V (5.0 V ± 10%) VDD = 3.0 to 3.6 V (3.3 V ± 10%) 14 14 190 120 MHz MHz DC Clock Output Duty Cycle at 1.5 V up to 190 MHz 45 50 55 % tjitter (rms) Period Jitter (RMS, 1 σ) 15 ps tjitter (pk−to−pk) Total Period Jitter, (peak−to−peak) ±40 ps tr/tf Output rise/fall time (0.8 V to 2.0 V / 2.0 V to 0.8 V) 1 ns 3. Parameters are guaranteed by characterization and design, not tested in production. |
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