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BRY62 датащи(PDF) 6 Page - NXP Semiconductors |
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BRY62 датащи(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page ![]() 1999 Apr 22 6 Philips Semiconductors Product specification Silicon controlled switch BRY62 Fig.8 Test circuit for turn-off time. handbook, halfpage MBB684 +12 V +50 V VAK RKG-K C mercury wetted contact 16 k Ω 2.7 k Ω 1 k Ω Fig.9 Capacitance increased until C = Copt dashed curve disappears. handbook, halfpage MBB686 VAK (V) 12 – 12 tq C < Copt C = Copt time 0 Fig.10 Normalized DC current gain as a function of anode gate current. X is the value of hFE at IC = 10 mA; VAG-K = 2 V; Tamb =25 °C. handbook, halfpage 0 100 1.2 0 0.4 0.8 MBB584 50 hFE X IAG (mA) VAG-K = 5 V 2 V Fig.11 Normalized DC current gain as a function of ambient temperature. X is the value of hFE at IAG = 10 mA; VAG-K = 2 V; Tamb =25 °C. handbook, halfpage 0 1.8 1.4 1.0 0.6 50 150 MBB583 100 T ( C) amb o h FE X |
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