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MAC8S датащи(PDF) 5 Page - ON Semiconductor

номер детали MAC8S
подробное описание детали  Sensitive Gate Triacs Silicon Bidirectional Thyristors
PDF  7 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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MAC8S датащи(HTML) 5 Page - ON Semiconductor

  MAC8S Datasheet HTML 1Page - ON Semiconductor MAC8S Datasheet HTML 2Page - ON Semiconductor MAC8S Datasheet HTML 3Page - ON Semiconductor MAC8S Datasheet HTML 4Page - ON Semiconductor MAC8S Datasheet HTML 5Page - ON Semiconductor MAC8S Datasheet HTML 6Page - ON Semiconductor MAC8S Datasheet HTML 7Page - ON Semiconductor  
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MAC8SD, MAC8SM, MAC8SN
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Figure 7. Typical Gate Trigger Current Versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Gate Trigger Voltage Versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
110
95
80
65
50
35
20
5
−10
−25
−40
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Q2
Q1
Q3
Q3
Q1
110
95
80
65
50
35
20
5
−10
−25
−40
0
2
4
6
8
10
12
14
Q2
Q3
Q1
Figure 9. Typical Exponential Static dv/dt Versus
Gate−MT1 Resistance, MT2(+)
RGK, GATE−MT1 RESISTANCE (OHMS)
Figure 10. Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(+)
VPK, Peak Voltage (Volts)
Figure 11. Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(+)
TJ, Junction Temperature (°C)
Figure 12. Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(−)
VPK, Peak Voltage (Volts)
VPK = 400 V
600 V
800 V
TJ = 110°C
200
180
160
140
120
100
80
1000
900
800
700
600
500
400
300
200
100
60
RG − MT1 = 510 W
TJ = 100°C
110
°C
120
°C
130
120
110
100
90
80
400
450
500
550
650
700
750
600
800
100
RG − MT1 = 510 W
VPK = 400 V
600 V
800 V
130
120
110
100
90
80
70
105
110
400
450
500
550
600
650
700
750
800
RG − MT1 = 510 W
TJ = 100°C
110
°C
100
150
200
250
300
350



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