BLW86 datasheet(11/15 Pages) PHILIPS

номер детали	BLW86

подробное описание детали	HF/VHF power transistor

PDF	15 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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11 / 15 page

August 1986

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW86

Fig.17 Intermodulation distortion as a function of

output power.(1)

VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;

f2 = 28,001 MHz; typical values.

handbook, halfpage

025

−20

−50

−40

−30

MGP643

d3, d5

(dB)

P.E.P. (W)

Th =

°C

Fig.18 Double-tone efficiency and power gain as a

function of output power.

VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;

f2 = 28,001 MHz; Th =25 °C; typical values.

handbook, halfpage

025

(dB)

P.E.P. (W)

MGP644

ηdt

(%)

ηdt

Fig.19 Power gain as a function of frequency.

handbook, halfpage

MGP645

110

102

(dB)

f (MHz)

VCE = 28 V; IC(ZS) = 50 mA; PL = 47,5 W;

Th =25 °C; ZL = 6,4 Ω.

Figs 19 and 20 are typical curves and hold for an

unneutralized amplifier in s.s.b. class-AB operation.

Fig.20 Input impedance (series components) as a

function of frequency.

handbook, halfpage

−10

MGP646

110

102

ri, xi

(

Ω)

f (MHz)

VCE = 28 V; IC(ZS) = 50 mA; PL = 47,5 W;

Th =25 °C; ZL = 6,4 Ω.

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