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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BLW77 датащи(PDF) 8 Page - NXP Semiconductors |
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BLW77 датащи(HTML) 8 Page - NXP Semiconductors |
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8 / 17 page  August 1986 8 Philips Semiconductors Product specification HF/VHF power transistor BLW77 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. Fig.9 Intermodulation distortion as a function of output power.(1.) VCE = 28 V; IC(ZS) = 100 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 °C; typical values. handbook, halfpage 0 100 50 150 −20 d3, d5 (dB) −60 −40 MGP528 P.E.P. (W) d5 d3 Fig.10 Double-tone efficiency and power gain as a function of output power. VCE = 28 V; IC(ZS) = 100 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 °C; typical values. handbook, halfpage 0 50 100 150 60 40 ηdt (%) 0 20 30 20 0 10 MGP529 P.E.P. (W) ηdt Gp (dB) Gp |
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