Limiting values in accordance with the Maximum system(IEC 134)

2/5

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HAOPIN MICROELECTRONICS CO.,LTD.

TM

HPM

SCRs

SYMBOL

PARAMETER

CONDITIONS

MIN

Rating

UNIT

SYMBOL

PARAMETER

CONDITIONS

MIN

V

DRM

I

T(RMS)

It

2

I

I

I

T(AV)

TSM

FGM

V

RGM

P

GM

T

stg

T

j

P

G(AV)

Repetitive peak-off

Voltage

RMS on-state current

I t for fusing

2

Average On-Current

Surge On-Current

Peak Forward gate current

Peak Reverse Gate Voltage

Peak gate power

Average gate power

Storage junction

Temperature Range

Operating junction

Temperature Range

V

A

V

6

W

W

-

-

-

-

-

-

2.0

20

0.2

A

A

A

-

-

0.5

0.1

-

-55

-40

400

600

2P4M

2P6M

+125

+150

T =25 C unless otherwise stated

J

O

Static characteristics

I

GT

Dynamic Characteristics

I

RRM

Repetitive Peak

Reverse Current

Themnal Resistance

R

th(j-c)

Gate trigger current

V =6V,R =100

R =1 K

DM

L

GK

V

=Rated,Tj=110 C,

RRM

o

Junction to Case

V =V

,T =125 C,R =1K

RM

RRM

j

GK

o

V =6V,R =100

R =1K

DM

L

GK

V =1/2V

,T =125 C,R =1K

DM

DRM

j

GK

o

I=4A,

TM

UNIT

MAX

TYP

200

-

-

I

DRM

Repetitive Peak

Off-State Current

AS

2

2

V

TM

V

GT

Peak On-Stage Voltage

Gate trigger voltage

-

-

-

-

-

100

10

/W

-

0.8

V

-

0.2

-

-

-

2.2

100

V

V

-

-

33

A

A

A

V

GD

Gate Non-Trigger

Voltage

2P4M

2P6M

2P4M

2P6M