NXP Semiconductors

MF4SAM3x

MIFARE SAM AV3 secure access module

Conditions: VDD = 1.62 V to 5.5 V; VSS = 0 V; Tamb = -25 °C to +85 °C, unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IIH2(max): VI = 0.7 VDD,

VDD = VDD(max) of the respective

supply voltage class A, B or C

IIL2

HIGH-level input current

(weak pull-up is on)

0 V ≤ VI ≤ 0.3 VDD;

Test conditions for the maximum

absolute value:

IIL2(max): VI = 0V,

VDD = VDD(max) of the respective

supply voltage class A, B or C

-

-

-20

μA

II2

input current

(weak pull-up is on)

0 V ≤ VI ≤ VDD;

Test conditions for the maximum

absolute value:

II2(max): VI = 0 V,

VDD = VDD(max) of the respective

supply voltage class A, B or C

0

-

-20

μA

IILIH2

leakage input current at

input voltage beyond VDD

VDD < VI ≤ VDD + 0.3 V; -25 °C ≤

Tamb ≤ +85 °C

Test conditions: VI = VDD + 0.3 V;

VDD = VDD(max) of the respective

supply voltage class A, B or C;

Tamb = +85 °C

-

-

20

μA

-0.3 V ≤ VI < 0 V; -25 °C ≤ Tamb ≤

+30 °C

Test conditions: VI = -0.3 V;

VDD = VDD(max) of the respective

supply voltage class A, B or C;

Tamb = +30 °C

-

-

-50

μA

IILIL2

leakage input current at

input voltage below VSS

-0.3 V ≤ VI < 0 V; +30 °C < Tamb

≤ +85 °C

Test conditions: VI = -0.3 V;

VDD = VDD(max) of the respective

supply voltage class A, B or C;

Tamb = +85 °C

-

-

-200

μA

Table 7. Electrical DC characteristics of Inputs CLK and RST_N[1][2]...continued

[1]

The active low RST_N input and outside reset state also the CLK input internally activate a resistive pull-down device to VSS. Accordingly a current is

flowing into the pad at voltages above 0 V. Figure 7 shows this input characteristic. In CLOCKSTOP mode the preferred electrical state on CLK is a LOW

level, in order to minimize the power consumption.

[2]

The CLK input internally has a resistive pull-up device to VDD activated during IC reset. Accordingly a current is flowing out of the pad at voltages below

VDD. Figure 8 shows this input characteristic.

Conditions: (A) VDD = 1.62 V to 1.98 V: VDDAE = VDD;

(B) VDD= 2.2 V to 5.5 V (i.e. outside Class C supply range): VDDAE(NOM) = 1.8 V;

VSS = 0 V; Tamb = -25 °C to +85 °C, unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIHT

HIGH-level input voltage

0.7 VDDAE -

VDDAE + 0.3 V

Table 8. Electrical DC characteristics of TP1 and TP2

MF4SAM3X_SDS

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Product short data sheet

Rev. 3.1 — 1 July 2023

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