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Document Number 85822

Rev. 1.4, 29-Apr-05

GSOT03-HT3 to GSOT36-HT3

Vishay Semiconductors

Electrical Characteristics

Typical Characteristics (Tamb = 25

°C unless otherwise specified)

Part Number

Device

Marking

Code

Rated

Stand-off

Voltage

Minimum

Breakdown

Voltage

Maximum

Clamping

Voltage

Maximum

Peak Pulse

Current

Maximum

Leakage

Current

Maximum

Capacitance

@ 1 mA

@ 0 V, 1 MHz

C

V

V

V

A

μA

pF

GSOT03-

HT3

A3

3.3

4

6.5

7.5

18

125

800

GSOT04-

HT3

A4

4

5

8.5

10.5

17

125

800

GSOT05-

HT3

A5

5

6

9.8

12.5

17

100

550

GSOT08-

HT3

A6

8

8.5

13.4

151510

400

GSOT12-

HT3

A7

12

13.3

19

28

12

2

185

GSOT15-

HT3

A8

15

16.7

24

35

10

1

140

GSOT24-

HT3

A9

24

26.7

43

60

5

1

83

GSOT36-

HT3

AA

36

40

60

75

2

1

80

Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time

100

1000

10000

0.1

1.0

10

td - Pulse Duration (

μ s)

100

1000

10000

10

300W, 8/20

17476

Figure 2. Pulse Waveform

0

50

100

90

80

70

60

40

30

20

10

110

Pulse Width (td)

is defined as the point

where the peak current

0

10

5

15

20

30

25

t - Time (

μs)

2

17477