BLV910 datasheet(4/12 Pages) PHILIPS

номер детали	BLV910

подробное описание детали	UHF power transistor

PDF	12 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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4 / 12 page

1995 Apr 11

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV910

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown

voltage

open emitter; IC = 5 mA

−−

V(BR)CEO

collector-emitter breakdown

voltage

open base; IC =15mA

−−

V(BR)EBO

emitter-base breakdown

voltage

open collector; IE = 0.3 mA

−−

ICES

collector leakage current

VBE = 0; VCE =28V

−−

0.75

hFE

DC current gain

VCE = 10 V; IC = 0.5 A;

−

120

collector capacitance

VCB = 26 V; IE =ie = 0; f = 1 MHz

−

Cre

feedback capacitance

VCE = 26 V; IC = 0; f = 1 MHz

−

Fig.4

DC current gain as a function of collector

current; typical values.

(1) VCE = 26 V: measured under pulsed conditions;

tp ≤ 500 µs; δ< 0.01.

(2) VCE =10V.

handbook, halfpage

100

0.5

1.0

1.5

2.0

2.5

hFE

I C (A)

MLC660

(1)

(2)

Fig.5

Collector capacitance as a function of

collector-base voltage; typical values.

IE =ie = 0; f = 1 MHz.

handbook, halfpage

010

(pF)

VCB (V)

MLC661

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