1999 Jun 25

2

Philips Semiconductors

Product specification

UHF linear push-pull power transistor

BLV862

FEATURES

• Double stage internal input and output matching

networks for an optimum wideband capability and

high gain

• Polysilicon emitter ballasting resistors for an optimum

temperature profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Common emitter class-AB operation in output stages in

bands 4 and 5 (470 to 860 MHz) television transmitter

amplifiers (vision or sound).

DESCRIPTION

NPN silicon planar epitaxial transistor with two sections in

push-pull configuration. The device is encapsulated in a

SOT262B 4-lead rectangular flange package, with two

ceramic caps.

PINNING

Notes

1. Collectors 1 and 2 are connected together internally.

2. Common emitters are connected to the flange.

PIN

SYMBOL

DESCRIPTION

1

c1

collector 1; note 1

2

c2

collector 2; note 1

3

b1

base 1

4

b2

base 2

5

e

common emitter; note 2

Fig.1 Simplified outline (SOT262B) and symbol.

handbook, halfpage

MAM031

c1

b1

b2

c2

e

12

34

Top view

55

QUICK REFERENCE DATA

MODE OF

OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

(dB)

CW class-AB

860

28

150

≥8

typ. 9

≥45

typ. 52

≤1

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.