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MS5F6015 датащи(PDF) 9 Page - Fuji Electric

номер детали MS5F6015
подробное описание детали  IGBT MODULE
PDF  13 Pages
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производитель  FUJI [Fuji Electric]
домашняя страница  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

MS5F6015 датащи(HTML) 9 Page - Fuji Electric

Back Button MS5F6015 Datasheet HTML 5Page - Fuji Electric MS5F6015 Datasheet HTML 6Page - Fuji Electric MS5F6015 Datasheet HTML 7Page - Fuji Electric MS5F6015 Datasheet HTML 8Page - Fuji Electric MS5F6015 Datasheet HTML 9Page - Fuji Electric MS5F6015 Datasheet HTML 10Page - Fuji Electric MS5F6015 Datasheet HTML 11Page - Fuji Electric MS5F6015 Datasheet HTML 12Page - Fuji Electric MS5F6015 Datasheet HTML 13Page - Fuji Electric  
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H04-004-03a
MS5F6015
13
a
9
Dynamic Gate charge (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25
oC
Vcc=600V, Ic=50A, Tj=25oC
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
0
25
50
75
100
125
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
8V
10V
12V
15V
VGE=20V
0
25
50
75
100
125
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
8V
10V
12V
15V
VGE=20V
0
25
50
75
100
125
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Tj=125oC
Tj=25oC
0
2
4
6
8
10
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
Ic=25A
Ic=50A
Ic=100A
0.1
1.0
10.0
100.0
0
10
20
30
Collector-Emitter voltage : VCE [ V ]
Cies
Coes
Cres
0
100
200
300
Gate charge : Qg [ nC ]
VGE
VCE
0



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