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DML3010LFDS датащи(PDF) 10 Page - Diodes Incorporated |
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DML3010LFDS датащи(HTML) 10 Page - Diodes Incorporated |
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10 / 12 page ![]() DML3010LFDS Document number: DS44721 Rev. 4 - 2 9 of 12 www.diodes.com July 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DML3010LFDS Application Information (continued) Short Circuit Protection The DML3010LFDS device is equipped with short-circuit protection that is used to help protect the part and the system from a sudden high-current event, such as the output, VOUT, being shorted to ground. This circuitry is only active when the gate of MOSFET is fully charged. Once active, the circuitry monitors the difference in the voltage on the VIN pin and the voltage on the BLEED pin. In order for the VOUT voltage to be monitored through the BLEED pin, it is required that BLEED pin be connected to VOUT either directly or through a resistor, REXT, which should not exceed 1KΩ. With the BLEED pin connected to VOUT, the short-circuit protection is able to monitor the voltage drop across the MOSFET. If the voltage drop across the MOSFET is greater than or equal to the short-circuit protection threshold voltage, the MOSFET is turned off immediately and the load bleed is activated. The part remains latched in this off state until EN is toggled or VCC supply voltage is cycled, at which point the MOSFET will be turn-on delay and slew rate. The current through the MOSFET that will cause a short-circuit event can be calculated by dividing the short-circuit protection threshold by expected on-resistance of the MOSFET. Thermal Shutdown The DML3010LFDS device is equipped with thermal shutdown protection for internally or externally generated excessive temperatures. This circuitry is disabled when EN is not active to reduce standby current. When an over-temperature condition is detected, the MOSFET is turned off immediately and the load bleed is active. The part comes out of thermal shutdown when the junction temperature decreases to a safe operating temperature as dictated by the thermal hysteresis. Upon exiting a thermal shutdown state, and if EN remains active, the MOSFET will be turned on in a controlled fashion with the normal output turn-on delay and slew rate. Undervoltage Lockout The DML3010LFDS device is equipped with undervoltage lockout protection. DML3010LFDS turns the MOSFET off and activates the load bleed when the input voltage VCC is less than or equal to the undervoltage lockout threshold. This circuitry is disabled when EN is not active to reduce standby current. If the VCC voltage rises above the undervoltage lockout threshold and EN remains active, the MOSFET will be turned on in a controlled fashion with the normal output turn-on delay and slew rate. PCB Layout Consideration 1. Place the input/output capacitors CVIN and CVOUT as close as possible to the VIN and VOUT pins. 2. The power traces which are VIN trace, VOUT trace and GND trace should be short, wide and directly for minimizing parasitic inductance. 3. Place feedback resistance RBLEED as close as possible to BLEED pin. 4. Place CVCC capacitor near the device pin. 5. Connect the signal ground to the GND pin, and keep a single connection from GND pin to the power ground behind the input or output capacitors. 6. For better power dissipation, via holes are recommended to connect the exposed pad’s landing area to a large copper polygon on the other side of the printed circuit board. The copper polygons and exposed pad shall be connected to VIN pin on the printed circuit board. 2 1 3 4 7 8 6 5 VIN EN Vcc GND VOUT VOUT PG BLEED GND (Power) CVIN CVOUT CVCC VOUT VIN RBLEED VIN VTERM RPG 10 |
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