PCFF60H120SWF

www.onsemi.com

2

ABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Parameter

Symbol

Ratings

Unit

Repetitive Peak Reverse Voltage

VRRM

1200

V

DC Forward Current, limited by TJ max (Note 1)

IF

60

A

Pulsed Forward Current, tp limited by TJ max (Note 2)

IFM

180

A

Operating Junction Temperature

TJ

−40 to +175

C

Storage Temperature Range

Tstg

+18 to +28

C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Nominal forward current at Tc = 100C when assembled in power module

2. Not subject to production test – verified by design/characterization.

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC CHARACTERISTICS (Tested on Wafers)

Breakdown Voltage

VBR

IR = 1 mA

1200

−

−

V

Reverse Leakage Current

IR

VR = 1200 V

−

−

10

mA

Forward Voltage

VF

IF = 60 A

−

1.78

2.08

V

ELECTRICAL CHARACTERISTICS (Not subjected to production test – verified by design/characterization)

Breakdown Voltage

VBR

IR = 1 mA

TJ = −40C

1200

−

−

V

Forward Voltage

VF

IF = 60 A

TJ = 175C

−

1.9

−

V

Reverse Recovery Time

Trr

IF = 60 A, VR = 600 V,

dIF/dt = 500 A/ms, TJ = 25C

−

246

−

ns

Reverse Recovery Charge

Qrr

−

2.6

−

mC

Reverse Recovery Current

IRRM

−

21.1

−

A

Reverse Recovery Time

Trr

IF = 60 A, VR = 600 V,

dIF/dt = 500 A/ms, TJ = 175C

−

431

−

ns

Reverse Recovery Charge

Qrr

−

7.1

−

mC

Reverse Recovery Current

IRRM

−

33.2

−

A

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTE: Switching characteristics and thermal properties are depending strongly on module design and mounting technology.