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DMHT3006LFJ датащи(PDF) 4 Page - Diodes Incorporated

номер детали DMHT3006LFJ
подробное описание детали  30V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMHT3006LFJ датащи(HTML) 4 Page - Diodes Incorporated

  DMHT3006LFJ Datasheet HTML 1Page - Diodes Incorporated DMHT3006LFJ Datasheet HTML 2Page - Diodes Incorporated DMHT3006LFJ Datasheet HTML 3Page - Diodes Incorporated DMHT3006LFJ Datasheet HTML 4Page - Diodes Incorporated DMHT3006LFJ Datasheet HTML 5Page - Diodes Incorporated DMHT3006LFJ Datasheet HTML 6Page - Diodes Incorporated DMHT3006LFJ Datasheet HTML 7Page - Diodes Incorporated  
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DMHT3006LFJ
Datasheet number: DS40627 Rev. 3 - 2
4 of 7
www.diodes.com
September 2018
© Diodes Incorporated
DMHT3006LFJ
0
0.005
0.01
0.015
0.02
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS = 10V, ID = 10A
V
GS = 4.5V, ID = 8A
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
J = 125℃
T
J = 85℃
T
J = 25℃
T
J = -55℃
V
GS = 0V
T
J = 150℃
10
100
1000
10000
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
C
rss
C
oss
C
iss
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
18
Qg (nC)
Figure 11. Gate Charge
V
DS = 15V, ID = 9A
0.01
0.1
1
10
100
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
P
W =10s
P
W =10ms
P
W =100µs
DC
R
DS(ON)
Limited
P
W
=1ms
P
W
=100ms
T
J(Max) = 150℃
T
C = 25℃
Single Pulse
DUT on 1*MRP
Board
V
GS= 10V
P
W =1s
0
0.5
1
1.5
2
2.5
3
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = 250μA
I
D = 1mA



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