BLU99_SL datasheet(3/17 Pages) PHILIPS

3 / 17 page

March 1993

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLU99

BLU99/SL

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter)

VCBO

max.

36 V

Collector-emitter voltage (open base)

VCEO

max.

16 V

Emitter-base voltage (open collector)

VEBO

max.

3 V

Collector current

d.c. or average

IC;IC(AV)

max.

0,8 A

peak value; f

> 1 MHz

ICM

max.

2,5 A

D.C. power dissipation up to Tmb =50 °CPtot (d.c.)

max.

12,5 W

R.F. power dissipation

> 1 MHz; T

mb =25 °CPtot (r.f.)

max.

19 W

Storage temperature

Tstg

−65 to + 150 °C

Operating junction temperature

max.

200

°C

Rth mb-h = 0,6 K/W.

Fig.3 D.C. SOAR.

handbook, halfpage

10−1

MDA372

VCE (V)

(A)

102

Th = 70 °C

Tmb = 50 °C

Fig.4 Power/temperature derating curves.

I Continuous d.c. operation

II Continuous r.f. operation (f

> 1 MHz).

III Short-time r.f. operation during mismatch (f

> 1 MHz).

handbook, halfpage

III

100

Ptot

(W)

MDA373

Th (°C)

THERMAL RESISTANCE

(dissipation = 9 W; Tmb =25 °C)

From junction to mounting base

(d.c. dissipation)

Rth j-mb(dc)

10 K/W

From junction to mounting base

(r.f. dissipation)

Rth j-mb(rf)

7,5 K/W

From mounting base to heatsink

Rth mb-h

0,6 K/W

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