PMLL4153

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 3 — 19 August 2010

3 of 10

NXP Semiconductors

PMLL4153

High-speed diode

7.

Characteristics

[1]

When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA.

[2]

When switched from IF = 10 mA to IR =60mA; RL = 100 Ω; measured at IR =1mA.

[3]

When switched to IF = 200 mA; tr = 0.4 ns; measured at VF =1V.

Table 7.

Characteristics

Tj =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

IF = 0.1 mA

490

-

550

mV

IF = 0.25 mA

530

-

590

mV

IF = 1 mA

590

-

670

mV

IF = 2 mA

620

-

700

mV

IF = 10 mA

700

-

810

mV

IF = 50 mA

740

-

880

mV

IR

reverse current

VR = 50 V

--0.05

μA

VR =50V; Tj = 150 °C

--50

μA

Cd

diode capacitance

VR = 0 V; f = 1 MHz

--2

pF

trr

reverse recovery time

[1] --4

ns

[2] --2

ns

tfr

forward recovery time

[3] --10

ns

Device mounted on an FR4 Printed-Circuit Board (PCB).

(1) Tj = 175 °C; typical values

(2) Tj =25 °C; typical values

(3) Tj =25 °C; maximum values

Fig 1.

Forward current as a function of ambient

temperature; derating curve

Fig 2.

Forward current as a function of forward

voltage

0

100

200

300

200

0

100

mbg451

Tamb (°C)

IF

(mA)

012

600

0

200

400

mbg464

VF (V)

IF

(mA)

(1)

(2)

(3)