PMEG2005CT

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Product data sheet

Rev. 2 — 22 June 2010

3 of 14

NXP Semiconductors

PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

[1]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

[2]

Tj =25 °C prior to surge.

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[4]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

6.

Thermal characteristics

[1]

For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[4]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

[5]

Soldering point of cathode tab.

Per device; one diode loaded

Ptot

total power dissipation

Tamb ≤ 25 °C

[3] -330

mW

[4] -400

mW

[1] -460

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−55

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device; one diode loaded

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

[2] -

-

375

K/W

[3] -

-

310

K/W

[4] -

-

270

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

[5] --60

K/W