1998 Jul 29

2

Philips Semiconductors

Product specification

VHF push-pull power MOS transistor

BLF378

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Broadcast transmitter applications in the VHF frequency

range.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode

vertical D-MOS transistor encapsulated in a 4-lead,

SOT262A1 balanced flange package with two ceramic

caps. The mounting flange provides the common source

connection for the transistors.

CAUTION

This product is supplied in anti-static packing to prevent

damage caused by electrostatic discharge during

transport and handling. For further information, refer to

Philips specs.: SNW-EQ-608, SNW-FQ-302A, and

SNW-FQ-302B.

PINNING - SOT262A1

PIN

SYMBOL

DESCRIPTION

drain 1

drain 2

gate 1

gate 2

5

s

source

Fig.1 Simplified outline and symbol.

12

34

MAM098

Top view

55

d

g

s

d

g

QUICK REFERENCE DATA

Note

1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized

input / 25% synchronized output compression in television service (negative modulation, CCIR system).

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

CW, class-AB

225

50

250

>14

<1

>50

typ. 16

typ. 0.6

typ. 55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.