1996 Oct 21

2

Philips Semiconductors

Product specification

VHF power MOS transistor

BLF246

FEATURES

• High power gain

• Low noise figure

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

APPLICATIONS

• Large signal amplifier applications in the VHF frequency

range.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS

transistor encapsulated in a 4-lead, SOT121 flange

package, with a ceramic cap. All leads are isolated from

the flange. A marking code, showing gate-source voltage

applications. Refer to the General section of Data

Handbook SC19a for further information.

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

PINNING - SOT121

PIN

SYMBOL

DESCRIPTION

1

d

drain

2

s

source

3

g

gate

4

s

source

Fig.1 Simplified outline and symbol.

handbook, halfpage

s

d

g

MAM267

14

3

2

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

CW, class-B

108

28

80

≥16

≥55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.