1999 Dec 06

4

Philips Semiconductors

Preliminary specification

UHF power LDMOS transistor

BLF2045

APPLICATION INFORMATION

Ruggedness in class-AB operation

The BLF2045 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the

MODE OF OPERATION

f

(MHz)

(V)

(mA)

(W)

(dB)

(%)

(dBc)

2-tone, class-AB

26

180

30 (PEP)

>10

>30

≤−25

Fig.3

Power gain and efficiency as a functions of

peak envelope load power, typical values.

0

4

8

12

16

20

0

1020304050

P

G

P

(dB)

0

10

20

30

40

50

η

D

(%)

G

η