BLF175 datasheet(4/18 Pages) PHILIPS

4 / 18 page

September 1992

Philips Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF175

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

ID = 10 mA; VGS = 0

110

−−

IDSS

drain-source leakage current

VGS = 0; VDS = 50 V

−−

100

µA

IGSS

gate-source leakage current

±VGS = 20 V; VDS = 0

−−

µA

VGS(th)

gate-source threshold voltage

ID = 10 mA; VDS = 10 V

−

4.5

∆V

gate-source voltage difference of

matched pairs

ID = 10 mA; VDS = 10 V

−−

100

gfs

forward transconductance

ID = 1 A; VDS = 10 V

1.1

1.6

−

RDS(on)

drain-source on-state resistance

ID = 1 A; VGS = 10 V

−

0.75

1.5

Ω

IDSX

on-state drain current

VGS = 10 V; VDS = 10 V

−

5.5

−

Cis

input capacitance

VGS = 0; VDS = 50 V; f = 1 MHz

−

130

−

Cos

output capacitance

VGS = 0; VDS = 50 V; f = 1 MHz

−

Crs

feedback capacitance

VGS = 0; VDS = 50 V; f = 1 MHz

−

3.7

−

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current, typical

values.

VDS = 10 V.

handbook, halfpage

−5

MGP064

10−2

10−1

−4

−3

−2

−1

T.C.

(mV/K)

ID (A)

Fig.5

Drain current as a function of gate-source

voltage, typical values.

VDS = 10 V; Tj =25 °C.

handbook, halfpage

MGP065

510

VGS (V)

(A)

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