25

23.7

5

01G

02G 03G

04G

05G 06G 07G

●IF(AV)

1A

●

50V-1000V

●High surge current capability

Applications

●

●

X : From 0

1 To 7

Marking

●

Features

VRRM

General P urpose Bridge Rectifier

Glass passivated chip

rpose 1 phase Bridge

rectifier applications

General pu

Item

Symbol

Unit

Conditions

DB1

Repetitive Peak Reverse

Voltage

VRRM

V

50

100

200

400

600

800 1000

Average Rectified Output

Current

IO

A

60Hz sine wave, R-load, Ta=

25℃

1.0

Surge(Non-

repetitive)Forward Current

IFSM

A

60HZ

sine wave, 1 cycle, Tj=25℃

0

Current Squared Time

I

2t

A

2S 1ms≤t<8.3ms Tj=25℃，Rating of per diode

Operation Junction and

Storage Temperature Range

TJ,Tstg

℃

-55 ~+150

V

35

70

140

280

420 560 700

V RMS

MaximumRMSVoltage

half

Electrical Characteristics（Ta=25℃ Unless otherwise specified）

Item

Symbol Unit

Test Condition

Max

Peak Forward Voltage

VFM

V

IFM=1.0A, Pulse measurement, Rating of per diode

1.0

Peak Reverse Current

IRRM

μA

VRM=VRRM , Pulse measurement, Rating of per diode

10

Thermal Resistance

RθJ-A

℃/W

Between junction and ambient, On glass-epoxi substrate

RθJ-L

Between junction and lead

15

DB Plastic-Encapsulate Bridge Rectifier

DB-1

DB101G THRU DB107G

DG10XG

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

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