BLF147 datasheet(9/12 Pages) PHILIPS

номер детали	BLF147

подробное описание детали	VHF power MOS transistor

PDF	12 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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9 / 12 page

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF147

Fig.14 Gain as a function of frequency, typical

values.

Class-AB operation; VDS = 28 V; IDQ = 1 A;

RGS = 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω.

handbook, halfpage

MGP058

(dB)

f (MHz)

Fig.15 Input impedance as a function of frequency

(series components), typical values.

Class-AB operation; VDS = 28 V; IDQ = 1 A;

RGS = 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω.

handbook, halfpage

−5

MGP059

(

Ω)

f (MHz)

Fig.16 Input impedance as a function of frequency

(series components), typical values.

Class-B operation; VDS = 28 V; IDQ = 0.2 A;

RGS = 15 Ω; PL = 150 W.

handbook, halfpage

100

200

−2

−4

150

MGP061

(

Ω)

f (MHz)

Fig.17 Load impedance as a function of frequency

(series components), typical values.

Class-B operation; VDS = 28 V; IDQ = 0.2 A;

RGS = 15 Ω; PL = 150 W.

handbook, halfpage

100

200

−1

150

MGP062

(

Ω)

f (MHz)

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