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RT3602AE датащи(PDF) 40 Page - Richtek Technology Corporation

номер детали RT3602AE
подробное описание детали  Triple Channel PWM Controller for IMVP8 Mobile CPU Core Power Supply
PDF  46 Pages
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производитель  RICHTEK [Richtek Technology Corporation]
домашняя страница  http://www.richtek.com
Logo RICHTEK - Richtek Technology Corporation

RT3602AE датащи(HTML) 40 Page - Richtek Technology Corporation

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RT3602AE
www.richtek.com
DS3602AE-00 August 2017
©
Copyright 2017 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
Over-Current Protection
The RT3602AE has dual OCP mechanism. One is named
SUM-OCP, the other is called SPIKE-OCP. The over current
protection (OCP) forces high-side MOSFET and low-side
MOSFET off by shutting down internal PWM logic drivers.
The RT3602AE provides SUM-OCP which is 160% of
IMON_04. IMON_04 is the current that makes (VIMON
−
VREF = 0.4V). When output current is higher than the SUM-
OCP threshold, SUM-OCP is latched with a 40
μs delay
time to prevent false trigger. Besides, the SUM-OCP
function is masked when dynamic VID transient occurs
and after dynamic VID transition, SUM-OCP is masked
for 80
μs. The other one is SPIKE-OCP which should trip
when the output current exceeds SPIKE_OCP threshold
during first DVID. SPIKE_OCP threshold is dependent
on IMAX level as shown in Table 4 and Table 5. When
output current is higher than the SPIKE-OCP threshold,
SPIKE-OCP is latched with a 1
μs delay time to prevent
false trigger.
Output Over-Voltage Protection
An OVP condition is detected when the VSEN pin is
350mV more than VID. When OVP is detected, the high-
side gate voltage UGATEx is pulled low and the low-side
gate voltage LGATEx is pulled high. OVP is latched with
a 0.5us delay- to prevent false trigger.
Negative Voltage Protection
Since the OVP latch continuously turns on all low-side
MOSFETs of the VR, the VR will suffer negative output
voltage. When the VSEN detects a voltage below
−0.07V
after triggering OVP, the VR triggers NVP to turn off all
low-side MOSFETs of the VR while the high-side
MOSFETs remain off. After triggering NVP, if the output
voltage rises above 0V, the OVP latch restarts to turn on
all low-side MOSFETs. Therefore, the output voltage may
bounce between 0V and
−0.07V due to OVP latch and
NVP triggering. The NVP function will be active only after
OVP is triggered.
Table 7. SET3 Pin Setting for DVIDTH

SET3_I
R1 x R2
V80μA
R1 R2
DVIDTH_ MAIN
(mV)
DVIDTH_ AUXI
(mV)
Min
Typ
Max
Unit
60.07331
75.07331
90.07331
mV
15
15
160.1711
175.1711
190.1711
mV
30
260.2688
275.2688
290.2688
mV
60
360.3666
375.3666
390.3666
mV
Disable
460.4643
475.4643
490.4643
mV
30
15
560.5621
575.5621
590.5621
mV
30
660.6598
675.6598
690.6598
mV
60
760.7576
775.7576
790.7576
mV
Disable
860.8553
875.8553
890.8553
mV
60
15
960.9531
975.9531
990.9531
mV
30
1061.051
1076.051
1091.051
mV
60
1161.149
1176.149
1191.149
mV
Disable
1261.246
1276.246
1291.246
mV
Disable
15
1361.344
1376.344
1391.344
mV
30
1461.442
1476.442
1491.442
mV
60
1561.54
1576.54
1591.54
mV
Disable



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