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GLT6400L08LL-85ST датащи(PDF) 1 Page - List of Unclassifed Manufacturers

номер детали GLT6400L08LL-85ST
подробное описание детали  Ultra Low Power 512k x 8 CMOS SRAM
PDF  10 Pages
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производитель  ETC [List of Unclassifed Manufacturers]
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GLT6400L08LL-85ST датащи(HTML) 1 Page - List of Unclassifed Manufacturers

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G -LINK
GLT6400L08
Ultra Low Power 512k x 8 CMOS SRAM
Feb 2001(Rev. 1.1)
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 1 -
Features :
Description :
∗ Low-power consumption.
-active: 45mA at 85ns.
-stand by :
20
µA (CMOS input / output)
5
µA (CMOS input / output, SL)
∗ Single +2.7 to 3.3V power supply.
∗ Equal access and cycle time.
∗ 85 ns access time at 2.7V to 3.3V 70ns
access time at 3V to 3.6V
∗ 1.0V data retention mode.
∗ TTL compatible, tri-state input/output.
∗ Automatic power-down when deselected.
∗ Industrial grade (-40°C ~ 85°C)
available.
∗ Package available: sTSOP , SOP.
The GLT6400L08 is a low power CMOS Static
RAM organized as 524,288 x 8 bits. Easy memory
expansion is provided by an active LOW CE1 an
active LOW OE , and Tri-state I/O’s. This device has
an
automatic
power-down
mode
feature
when
deselected.
Writing to the device is accomplished by taking
chip Enable 1 ( CE1 ) with Write Enable ( WE ) LOW.
Reading from the device is performed by taking Chip
Enable 1 ( CE1 ) with Output Enable ( OE ) LOW
while Write Enable ( WE ) and Chip Enable 2 (CE2)
is HIGH. The I/O pins are placed in a high-impedance
state when the device is deselected : the outputs are
disabled during a write cycle.
The GLT6400L08 comes with a 1V data retention
feature and Lower Standby Power. The GLT6400L08
is available in a 32-pin sTSOP packages,and 32pin
SOP package.
Function Block Diagram :
Cell
Array
INPUT BUFFER
COLUMN DECODER
CONTROL
CIRCUIT
OE
WE
CE1
CE2
I/O7
I/O1
Column Address


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