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BGY282 датащи(PDF) 4 Page - NXP Semiconductors

номер детали BGY282
подробное описание детали  dual band UHF amplifier module for GSM900 and GSM1800
PDF  12 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BGY282 датащи(HTML) 4 Page - NXP Semiconductors

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2001 Dec 04
4
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
CHARACTERISTICS
ZS =ZL =50 Ω; PD1,2 =0dBm; VS1 =VS2 = 3.5 V; VAPC ≤ 2.2 V; Tmb =25 °C; tp = 575 µs; δ =1: 8;
f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); measured on demoboard of fig 7; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Vband
band switch voltage
GSM1800 selected
0
−
0.7
V
GSM900 selected
1.7
−
5.5
V
Iband
band switch current
−−
30
µA
IL
leakage current
VAPC = 0.2 V; PD1,2 =0 mW
−−
10
µA
ICM1, ICM2 peak control current
−−
2mA
PD1
input drive power (GSM900)
−3
−
4dBm
PD2
input drive power (GSM1800)
−32
5
dBm
PL1
load power GSM900
VAPC =2.2 V
34.7
35
−
dBm
VAPC = 2.2 V; VS1 = 3.1 V
34.2
34.5
−
dBm
PL2
load power GSM1800
VAPC =2.2 V
32.3
33
−
dBm
VAPC = 2.2 V; VS1 = 3.1 V
31.7
32.3
−
dBm
η
1
efficiency GSM900
VAPC =2V
43
50
−
%
η
2
efficiency GSM1800
VAPC =2V
38
45
−
%
H2, H3
harmonics GSM900
PL1 = 34.7 dBm
−−
−38
dBc
harmonics GSM1800
PL2 = 32.3 dBm
−−
−35
dBc
VSWRin
input VSWR of active device
VS1,2 = 3.1 to 4.4 V; PD1,2 =0dBm;
PL1 = 5 to 34.7 dBm;
PL2 = 0 to 32.3 dBm
−
3: 1
input VSWR of inactive
device
VS1,2 = 3.1 to 5.15 V; VAPC ≤ 0.5 V
−
8: 1
stability
VS1,2 =3to 5 V; PD1 = 0 to 3 dBm;
PD2 = 0 to 5 dBm; PL1 =<35 dBm;
PL2 = <33 dBm; VSWR = 6 : 1 through
all phases
−−
−60
dBc
VS1,2 = 3.1 to 4.2 V; PD1 = 0 to 3 dBm;
PD2 = 0 to 5 dBm; PL1 =<34 dBm;
PL2 = <32 dBm; VSWR = 6 : 1 through
all phases;
δ =4 : 8
−−
−60
dBc
isolation
VAPC = 0.5 V; PD1 =3dBm;
PD2 =5dBm
−−
−36
dBm
second harmonic isolation
from GSM900 into GSM1800
PL1 = 34.7 dBm
−−
−20
dBm
maximum control slope
−5dBm < P
L1,2 <PLmax
120
−
200
dB/V
tr
carrier rise time
PL1 = 5 to 34 dBm; PL2 =0to 32 dBm;
time to settle within
−0.5 dB of final P
L
−
1.5
2
µs
tf
carrier fall time
PL1 = 5 to 34 dBm; PL2 =0to 32 dBm;
time to settle within
−0.5 dB of final P
L
−
1.5
2
µs



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