Medium Power Transistor(32V,1A)

2SD1664

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=50μA,IE=0

40

V

Collector-emitter breakdown voltage V(BR)CEO

IC=1mA,IB=0

32

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=20V,IE=0

0.5

μA

Emitter cut-off current

IEBO

VEB=4V,IC=0

0.5

μA

DC current gain

hFE

VCE=3V,IC=100mA

82

390

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB= 50mA

0.15

0.4

V

Transition frequency

fT

VCE=5V, IC= -50mA,

f=100MHz

150

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

15

pF

CLASSIFICATION OF hFE(1)

Rank

P

Q

R

Range

82-180

120-270

180-390

MARKING

DAP

DAQ

DAR

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

www.dgnjdz.com

www.dgnjdz.com