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BAS40H датащи(PDF) 3 Page - NXP Semiconductors |
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BAS40H датащи(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 9397 750 14968 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 25 April 2005 3 of 8 Philips Semiconductors BAS40H General-purpose Schottky diode in small SOD123F package 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Soldering point of cathode tab. 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] [2] - - 330 K/W Rth(j-sp) thermal resistance from junction to solder point [3] - - 70 K/W Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF =1mA [1] - - 380 mV IF =10mA [1] - - 500 mV IF =40mA [1] --1 V IR reverse current VR = 30 V --1 µA VR = 40 V --10 µA Cd diode capacitance VR = 0 V; f = 1 MHz - - 5 pF |
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