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STM32H7 датащи(PDF) 133 Page - STMicroelectronics

номер детали STM32H7
подробное описание детали  32-bit Arm® Cortex®-M7 480MHz MCUs, up to 2MB flash, up to 1MB RAM, 46 com. and analog interfaces
PDF  357 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32H7 датащи(HTML) 133 Page - STMicroelectronics

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DS12110 Rev 10
133/357
STM32H742xI/G STM32H743xI/G
Electrical characteristics (rev Y)
320
Table 53. Flash memory programming
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit
tprog
Word (266 bits) programming
time
Program/erase parallelism x 8
-
290
580(2)
µs
Program/erase parallelism x 16
-
180
360
Program/erase parallelism x 32
-
130
260
Program/erase parallelism x 64
-
100
200
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism x 8
-
2
4
s
Program/erase parallelism x 16
-
1.8
3.6
Program/erase parallelism x 32
-
1.1
2.2
Program/erase parallelism x 64
-
1
2
tME
Mass erase time
Program/erase parallelism x 8
-
13
26
Program/erase parallelism x 16
-
8
16
Program/erase parallelism x 32
-
6
12
Program/erase parallelism x 64
-
5
10
Vprog
Programming voltage
Program parallelism x 8
1.62
-
3.6
V
Program parallelism x 16
Program parallelism x 32
Program parallelism x 64
1.8
-
3.6
1. Guaranteed by characterization results.
2. The maximum programming time is measured after 10K erase operations.
Table 54. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
NEND
Endurance
TJ = –40 to +125 °C (6 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle at TA = 85 °C
30
Years
10 kcycles at TA = 55 °C
20
1. Guaranteed by characterization results.



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