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STM32H7 датащи(PDF) 130 Page - STMicroelectronics |
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STM32H7 датащи(HTML) 130 Page - STMicroelectronics |
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130 / 357 page ![]() Electrical characteristics (rev Y) STM32H742xI/G STM32H743xI/G 130/357 DS12110 Rev 10 Low-speed internal (LSI) RC oscillator 6.3.10 PLL characteristics The parameters given in Table 50 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 24: General operating conditions. ∆TEMP (CSI) CSI oscillator frequency drift over temperature TJ = 0 to 85 °C - −3.7(3) 4.5(3) % TJ = −40 to 125 °C - −11(3) 7.5(3) DVDD (CSI) CSI oscillator frequency drift over VDD VDD = 1.62 to 3.6 V - − 0.06 0.06 % tsu(CSI) CSI oscillator startup time - - 1 2 µs tstab(CSI) CSI oscillator stabilization time (to reach ±3% of fCSI) - - 4 8 cycle IDD(CSI) CSI oscillator power consumption - - 23 30 µA 1. Guaranteed by design. 2. Guaranteed by test in production. 3. Guaranteed by characterization. Table 48. CSI oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 49. LSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fLSI(1) 1. Guaranteed by characterization results. LSI frequency VDD = 3.3 V, TJ = 25 °C 31.4 32 32.6 kHz TJ = –40 to 105 °C, VDD = 1.62 to 3.6 V 29.76 - 33.60 tsu(LSI)(2) 2. Guaranteed by design. LSI oscillator startup time - - 80 130 µs tstab(LSI)(2) LSI oscillator stabilization time (5% of final value) - - 120 170 IDD(LSI)(2) LSI oscillator power consumption - - 130 280 nA Table 50. PLL characteristics (wide VCO frequency range)(1) Symbol Parameter Conditions Min Typ Max Unit fPLL_IN PLL input clock - 2 - 16 MHz PLL input clock duty cycle - 10 - 90 % |
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