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SN65MLVD2 датащи(PDF) 3 Page - Texas Instruments

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номер детали SN65MLVD2
подробное описание детали  SINGLE M-LVDS RECEIVERS
PDF  17 Pages
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
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SN65MLVD2 датащи(HTML) 3 Page - Texas Instruments

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ABSOLUTE MAXIMUM RATINGS
PACKAGE DISSIPATION RATINGS
(1)
THERMAL CHARACTERISTICS
SN65MLVD2
SN65MLVD3
SLLS767 – NOVEMBER 2006
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION(1)
PART NUMBER
FUNCTION
PART MARKING
PACKAGE / CARRIER
SN65MLVD2DRBT
M-LVDS Type 1 Receiver
MF2
8-Pin SON / Small Tape and Reel
SN65MLVD2DRBR
M-LVDS Type 1 Receiver
MF2
8-Pin SON / Tape and Reel
SN65MLVD3DRBT
M-LVDS Type 2 Receiver
MF3
8-Pin SON / Small Tape and Reel
SN65MLVD3DRBR
M-LVDS Type 2 Receiver
MF3
8-Pin SON / Tape and Reel
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
over operating free-air temperature range (unless otherwise noted) (1)
VALUE
UNIT
VCC
Supply voltage range(2)
–0.5 to 4
V
RE
–0.5 to 4
V
Input voltage range
A or B
–1.8 to 4
V
Output voltage range
R
–0.3 to 4
V
Human-body model(3)
All other pins
±7
kV
A, B
±9
Electrostatic discharge
Machine model(4)
All pins
±200
V
Field-induced-charged-device model(5)
All pins
±2
kV
Continuous power dissipation
See Dissipation Rating Table
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
(3)
Tested in accordance with JEDEC Standard 22, Test Method A114-A. Bus pin stressed with respect to a common connection of GND
and VCC.
(4)
Tested in accordance with JEDEC Standard 22 Test Method A115-A.
(5)
Tested in accordance with EIA-JEDEC JESD22-C101C.
TA≤ 25°C
DERATING FACTOR(2)
TA = 85°C
PACKAGE
PCB TYPE
POWER RATING
ABOVE TA = 25°C
POWER RATING
Low-K
280 mW
2.80 mW/
°C
112 mW
8-SON DRB
High-K
662 mW
6.62 mW/
°C
264 mW
(1)
The thermal dissipations are in the consideration of soldering down the powerPAD without via on each type of boards.
(2)
This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
θ
JB
Junction-to-board thermal resistance
89
° C/W
θ
JC
Junction-to-case thermal resistance
98
° C/W
PD
Device power dissipation
RE at 0 V, CL = 15 pF, VID = 400 mV, 125 MHz
90
mW
3
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