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SN65MLVD2 датащи(PDF) 3 Page - Texas Instruments |
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SN65MLVD2 датащи(HTML) 3 Page - Texas Instruments |
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3 / 17 page ![]() www.ti.com ABSOLUTE MAXIMUM RATINGS PACKAGE DISSIPATION RATINGS (1) THERMAL CHARACTERISTICS SN65MLVD2 SN65MLVD3 SLLS767 – NOVEMBER 2006 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION(1) PART NUMBER FUNCTION PART MARKING PACKAGE / CARRIER SN65MLVD2DRBT M-LVDS Type 1 Receiver MF2 8-Pin SON / Small Tape and Reel SN65MLVD2DRBR M-LVDS Type 1 Receiver MF2 8-Pin SON / Tape and Reel SN65MLVD3DRBT M-LVDS Type 2 Receiver MF3 8-Pin SON / Small Tape and Reel SN65MLVD3DRBR M-LVDS Type 2 Receiver MF3 8-Pin SON / Tape and Reel (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. over operating free-air temperature range (unless otherwise noted) (1) VALUE UNIT VCC Supply voltage range(2) –0.5 to 4 V RE –0.5 to 4 V Input voltage range A or B –1.8 to 4 V Output voltage range R –0.3 to 4 V Human-body model(3) All other pins ±7 kV A, B ±9 Electrostatic discharge Machine model(4) All pins ±200 V Field-induced-charged-device model(5) All pins ±2 kV Continuous power dissipation See Dissipation Rating Table (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal. (3) Tested in accordance with JEDEC Standard 22, Test Method A114-A. Bus pin stressed with respect to a common connection of GND and VCC. (4) Tested in accordance with JEDEC Standard 22 Test Method A115-A. (5) Tested in accordance with EIA-JEDEC JESD22-C101C. TA≤ 25°C DERATING FACTOR(2) TA = 85°C PACKAGE PCB TYPE POWER RATING ABOVE TA = 25°C POWER RATING Low-K 280 mW 2.80 mW/ °C 112 mW 8-SON DRB High-K 662 mW 6.62 mW/ °C 264 mW (1) The thermal dissipations are in the consideration of soldering down the powerPAD without via on each type of boards. (2) This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT θ JB Junction-to-board thermal resistance 89 ° C/W θ JC Junction-to-case thermal resistance 98 ° C/W PD Device power dissipation RE at 0 V, CL = 15 pF, VID = 400 mV, 125 MHz 90 mW 3 Submit Documentation Feedback |
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