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STTH810G датащи(PDF) 4 Page - STMicroelectronics

номер детали STTH810G
подробное описание детали  Ultrafast recovery - high voltage diode
PDF  11 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH810G датащи(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH810
4/11
Figure 5.
Peak reverse recovery current
versus dIF/dt (typical values)
Figure 6.
Reverse recovery time versus dIF/dt
(typical values)
I(A)
RM
0
5
10
15
20
25
0
50
100
150
200
250
300
350
400
450
500
V
R=600V
T
j=125°C
I
F= 2 x IF(AV)
I
F= IF(AV)
I
F=0.5 x IF(AV)
dI /dt(A/µs)
F
t (ns)
rr
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
200
250
300
350
400
450
500
V
R=600V
T
j=125°C
I
F=0.5 x IF(AV)
I
F= 2 x IF(AV)
I
F=IF(AV)
dI /dt(A/µs)
F
Figure 7.
Reverse recovery charges
versus dIF/dt (typical values)
Figure 8.
Softness factor versus dIF/dt
(typical values)
Q (µC)
rr
0.0
0.5
1.0
1.5
2.0
2.5
0
50
100
150
200
250
300
350
400
450
500
I
F=0.5 x IF(AV)
I
F= IF(AV)
I
F= 2 x IF(AV)
V
R=600V
T
j=125°C
dI /dt(A/µs)
F
S factor
1.0
1.5
2.0
2.5
3.0
0
50
100
150
200
250
300
350
400
450
500
I
F = 2 x IF(AV)
V
R=600V
T
j=125°C
dI /dt(A/µs)
F
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
Figure 10.
Transient peak forward voltage
versus dIF/dt (typical values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
25
50
75
100
125
I
RM
Q
RR
S
factor
I
F = IF(AV)
V
R=600V
Reference: T
j=125°C
t
RR
T (°C)
j
V
(V)
FP
0
5
10
15
20
25
30
35
40
45
0
100
200
300
400
500
I
F = IF(AV)
T
j=125°C
dI /dt(A/µs)
F



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