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2SCR587D3 датащи(PDF) 2 Page - Nanjing International Group Co

номер детали 2SCR587D3
подробное описание детали  TO-252-2L Plastic-Encapsulate Transistors
PDF  7 Pages
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производитель  DGNJDZ [Nanjing International Group Co]
домашняя страница  http://www.dgnjdz.com/
Logo DGNJDZ - Nanjing International Group Co

2SCR587D3 датащи(HTML) 2 Page - Nanjing International Group Co

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background image
l
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
ICP*1
6
A
Power dissipation
PD*2
10
W
Junction temperature
Tj
150
℃
Range of storage temperature
Tstg
-55 to +150
℃
l
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Collector-base breakdown voltage
BVCBO
IC = 100μA
120
-
-
V
Collector-emitter breakdown
voltage
BVCEO
IC = 1mA
120
-
-
V
Emitter-base breakdown voltage
BVEBO
IE = 100μA
6
-
-
V
Collector cut-off current
ICBO
VCB = 100V
-
-
1
μA
Emitter cut-off current
IEBO
VEB = 4V
-
-
1
μA
Collector-emitter saturation voltage
VCE(sat) IC = 1A, IB = 100mA
-
60
120
mV
DC current gain
hFE
VCE = 5V, IC = 100mA
120
-
390
-
Transition frequency
fT
*3
VCE = 10V, IE = -1A,
f = 100MHz
-
250
-
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
-
35
-
pF
*1　Pw=10ms Single Pulse
*2　Tc=25℃
*3　Pulsed
Dongguan Nanjing Electronics Ltd.
www.dgnjdz.com
2/7



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