NPN

Epitaxial Planar Silicon Transistor

2SC4548

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=10uA,IE=0

400

V

Collector- emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

400

V

Emitter- base breakdown voltage

V(BR)EBO

IE=10uA,IC=0

5

V

Collector cut-off current

ICBO

VCB=300V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=4V,IC=0

0.1

μA

DC current gain

hFE

VCE=10V,IC=50mA

60

200

Base-emitter saturation voltage

VBE(sat)

IC=50mA,IB=5mA

1

V

Collector-emitter saturation voltage

VCE(sat)

IC=50mA,IB=5mA

0.6

V

Transition frequency

fT

VCE=30V, IC=10mA

70

MHz

Output capacitance

Cob

VCB=30V,IE=0,f=1MHz

4

pF

Reverse Transfer Capacitance

Cre

VCB=30V,IE=0,f=1MHz

3

pF

Turn-ON Time

ton

0.25

uS

Turn-OFF Time

toff

VCC=150V,IC=50mA,

IB1=IB2=5mA

5

uS

CLASSIFICATION OF hFE

Rank

D

E

Range

60-120

100-200

www.dgnjdz.com

www.dgnjdz.com