Silicon NPN Epitaxial Transistor

2SC2873

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-emitter breakdown voltage V(BR)CEO

IC=10mA, IB=0

50

V

Collector cut-off current

ICBO

VCB=50V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=2V,IC=500mA

70

240

VCE=2V,IC=2A

20

Collector-emitter saturation voltage

VCE(sat)

IC=1A, IB=50mA

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=1A, IB=50mA

1.2

V

Transition frequency

fT

VCE=2V,Ic=0.5A

120

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

30

pF

CLASSIFICATION OF hFE

Rank

O

Y

Range

70-140

120-240

MARKING

MO

MY

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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