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OM6002ST датащи(PDF) 2 Page - List of Unclassifed Manufacturers

номер детали OM6002ST
подробное описание детали  POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE
PDF  4 Pages
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производитель  ETC [List of Unclassifed Manufacturers]
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OM6002ST датащи(HTML) 2 Page - List of Unclassifed Manufacturers

  OM6002ST Datasheet HTML 1Page - List of Unclassifed Manufacturers OM6002ST Datasheet HTML 2Page - List of Unclassifed Manufacturers OM6002ST Datasheet HTML 3Page - List of Unclassifed Manufacturers OM6002ST Datasheet HTML 4Page - List of Unclassifed Manufacturers  
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ELECTRICAL CHARACTERISTICS: (T
C = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS: (T
C = 25°C unless otherwise noted)
STATIC P/N OM6101ST / OM6001ST (100V)
STATIC P/N OM6102ST / OM6002 ST (200V)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100
V
V
GS = 0,
BV
DSS
Drain-Source Breakdown
200
V
V
GS = 0,
Voltage
I
D = 250 mA
Voltage
I
D = 250 mA
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mAVGS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mA
I
GSS
Gate-Body Leakage (OM6101)
± 500
nA
V
GS = ± 12.8 V
I
GSS
Gate-Body Leakage (OM6102)
± 500
nA
V
GS = ± 12.8 V
I
GSS
Gate-Body Leakage (OM6001)
± 100
nA
V
GS = ± 20 V
I
GSS
Gate-Body Leakage (OM6002)
± 100
nA
V
GS = ± 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
T
C = 125° C
T
C = 125° C
I
D(on)
On-State Drain Current1
14
A
V
DS
2 V
DS(on), VGS = 10 V
I
D(on)
On-State Drain Current1
9.0
A
V
DS
2 V
DS(on), VGS = 10 V
V
DS(on)
Static Drain-Source On-State
1.2
1.60
V
V
GS = 10 V, ID = 8 A
V
DS(on)
Static Drain-Source On-State
1.25
2.2
V
V
GS = 10 V, ID = 5.0 A
Voltage1
Voltage1
R
DS(on)
Static Drain-Source On-State
0.20
V
GS = 10 V, ID = 8 A
R
DS(on)
Static Drain-Source On-State
0.44
V
GS = 10 V, ID = 5.0 A
Resistance1
Resistance1
R
DS(on)
Static Drain-Source On-State
0.40
V
GS = 10 V, ID = 8 A,
R
DS(on)
Static Drain-Source On-State
0.88
V
GS = 10 V, ID = 5.0 A,
Resistance1
T
C = 125 C
Resistance1
T
C = 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance1
4.0
S(W )
V
DS
2 V
DS(on), ID = 8 A
g
fs
Forward Transductance1
3.0
5.8
S(W )
V
DS
2 V
DS(on), ID = 5.0 A
C
iss
Input Capacitance
750
pF
V
GS = 0
C
iss
Input Capacitance
780
pF
V
GS = 0
C
oss
Output Capacitance
250
pF
V
DS = 25 V
C
oss
Output Capacitance
150
pF
V
DS = 25 V
C
rss
Reverse Transfer Capacitance
100
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
55
pF
f = 1 MHz
t
d(on)
Turn-On Delay Time
15
ns
V
DD = 30 V, ID @ 8 A
t
d(on)
Turn-On Delay Time
9
ns
V
DD = 75V, ID @ 5.0 A
t
r
Rise Time
35
ns
R
g = 7.5 W , VDS = 10 V
t
r
Rise Time
18
ns
R
g = 7.5 W , VGS =10 V
t
d(off)
Turn-Off Delay Time
38
ns
t
d(off)
Turn-Off Delay Time
45
ns
t
f
Fall Time
23
ns
t
f
Fall Time
27
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 14
A
Modified MOSPOWER
I
S
Continuous Source Current
- 9
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current1
- 56
A
the integral P-N
I
SM
Source Current1
- 36
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage1
- 2.5
V
T
C = 25 C, IS = -14 A, VGS = 0
V
SD
Diode Forward Voltage1
- 2
V
T
C = 25 C, IS = -9 A, VGS = 0
V
SD
Diode Forward Voltage1
- 2.5
V
T
C = 25 C, IS = -12 A, VGS = 0
V
SD
Diode Forward Voltage1
- 2
V
T
C = 25 C, IS = -8 A, VGS = 0
t
rr
Reverse Recovery Time
100
ns
T
J = 150 C, IF = IS,trr
Reverse Recovery Time
250
ns
T
J = 150 C, IF = IS,
dl
F/ds = 100 A/ms
dl
F/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
G
D
S
G
D
S



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