1999 Aug 11

2

Philips Semiconductors

Product specification

Silicon MMIC amplifier

BGA2001

FEATURES

• Low current, low voltage

• Very high power gain

• Low noise figure

• Integrated temperature compensated biasing

• Supply and RF output pin combined.

APPLICATIONS

• RF front end

• Wideband applications, e.g. analog and digital cellular

telephones, cordless telephones (PHS, DECT, etc.)

• Radar detectors

• Low noise amplifiers

• Satellite television tuners (SATV)

• High frequency oscillators.

DESCRIPTION

Silicon MMIC amplifier consisting of an NPN double

polysilicon transistor with integrated biasing for low voltage

applications in a plastic, 4-pin dual-emitter SOT343R

package.

PINNING

PIN

DESCRIPTION

1

GND

2

RF in

3

GND

handbook, halfpage

Top view

MAM430

21

4

3

BIAS

CIRCUIT

RFin

GND

VS+RFout

Fig.1 Simplified outline (SOT343R) and symbol.

Marking code: A1.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

DC supply voltage

RF input AC coupled

−

4.5

V

DC supply current

4.5

−

mA

MSG

maximum stable gain

19.5

−

dB

NF

noise figure

1.3

−

dB