BFT92W datasheet(2/12 Pages) PHILIPS

2 / 12 page

May 1994

Philips Semiconductors

Product speciﬁcation

PNP 4 GHz wideband transistor

BFT92W

FEATURES

• High power gain

• Gold metallization ensures

excellent reliability

• SOT323 (S-mini) package.

APPLICATION

It is intended as a general purpose

transistor for wideband applications

up to 2 GHz.

DESCRIPTION

Silicon PNP transistor in a plastic,

SOT323 (S-mini) package. The

BFT92W uses the same crystal as the

SOT23 version, BFT92.

PINNING

DESCRIPTION

base

emitter

collector

Marking code: W1.

Fig.1 SOT323.

handbook, 2 columns

MBC870

Top view

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−−20

VCEO

collector-emitter voltage

open base

−−−15

collector current (DC)

−−−35

Ptot

total power dissipation

up to Ts =93 °C; note 1

−−

300

hFE

DC current gain

IC = −15 mA; VCE = −10 V

−

Cre

feedback capacitance

IC = 0; VCB = −10 V; f = 1 MHz

−

0.5

−

transition frequency

IC = −15 mA; VCE = −10 V;

f = 500 MHz

−

GHz

GUM

maximum unilateral power gain IC = −15 mA; VCE = −10 V;

f = 500 MHz; Tamb =25 °C

−

noise ﬁgure

IC = −5 mA; VCE = −10 V;

f = 500 MHz

−

2.5

−

junction temperature

−−

150

°C

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