ZHCS350Q

Document number: DS42076 Rev. 3 - 2

2 of 6

www.diodes.com

May 2020

© Diodes Incorporated

ZHCS350Q

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Continuous Reverse Voltage

VR

40

V

Continuous Forward Current

IF

350

mA

Average Peak Forward Current; D.C. = 50%

IFAV

510

mA

Non Repetitive Forward Current

t

100µs

IFSM

4.2

A

t

10ms

910

mA

Electrostatic Discharge

HBM

4000

V

Electrostatic Discharge

MM

400

V

Electrostatic Discharge

CDM

1000

V

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation, TA = +25°C

(Note 5)

PD

230

mW

(Note 6)

370

Typical Thermal Resistance, Junction to Ambient

(Note 5)

RθJA

450

°C/W

(Note 6)

270

Junction Temperature

TJ

+125

°C

Storage Temperature Range

TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage

V(BR)R

40

60

—

V

IR = 100µA

Forward Voltage (Note 7)

VF

—

300

325

mV

IF = 30mA

—

335

370

IF = 50mA

—

405

460

IF = 100mA

—

730

810

IF = 350mA

Reverse Current

IR

—

7

12

µA

VR = 30V

Diode Capacitance

CD

—

3.3

6

pF

f = 1MHz, VR = 25V

Reverse Recovery Time

tRR

—

1.6

—

ns

Switched from IF = 100mA to

IR = 100mA

Measured @ IR = 10mA

Notes:

5. For a single device surface mounted on 1*MRP FR-4 PCB with 2oz copper pad.

6. For a single device surface mounted on 1 inch square with 2oz copper pad.

7.

Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.