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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BFS505 датащи(PDF) 6 Page - NXP Semiconductors |
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BFS505 датащи(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page  September 1995 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.6 Gain as a function of collector current. VCE = 6 V; f = 900 MHz; Tamb =25 °C. handbook, halfpage MRC016 0 5 10 15 20 25 02468 MSG GUM gain (dB) IC (mA) Fig.7 Gain as a function of collector current. VCE = 6 V; f = 2 GHz; Tamb =25 °C. handbook, halfpage MRC017 0 5 10 15 20 02468 MSG GUM Gmax gain (dB) IC (mA) Fig.8 Gain as a function of frequency. IC = 1.25 mA; VCE = 6 V; Tamb =25 °C. handbook, halfpage MRC015 0 10 20 30 40 50 10−2 10−1 110 f (GHz) MSG GUM Gmax gain (dB) Fig.9 Gain as a function of frequency. IC = 5 mA; VCE = 6 V; Tamb =25 °C. handbook, halfpage MRC014 0 10 20 30 40 50 10−1 10−2 110 f (GHz) MSG GUM Gmax gain (dB) |
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