BFS17W datasheet(3/6 Pages) PHILIPS

номер детали	BFS17W

подробное описание детали	NPN 1 GHz wideband transistor

PDF	6 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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3 / 6 page

1995 Sep 04

Philips Semiconductors

Product speciﬁcation

NPN 1 GHz wideband transistor

BFS17W

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj =25 °C (unless otherwise speciﬁed).

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

up to Ts =118 °C; note 1

190

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =10V

−−

hFE

DC current gain

IC = 2 mA; VCE =1V

−

transition frequency

IC = 25 mA; VCE =5V;

f = 500 MHz

−

1.6

−

GHz

collector capacitance

IE =ie = 0; VCB =10V;

f=1MHz

−

0.8

1.5

emitter capacitance

IC =ic = 0; VEB = 0.5 V;

f=1MHz

−

Cre

feedback capacitance

IB =ib = 0; VCE =5V;

f = 1 MHz; Tamb =25 °C

−

0.75

−

noise ﬁgure

IC = 2 mA; VCE =5V;

f = 500 MHz;

ΓS = Γopt

−

4.5

−

Fig.2 Power derating curve.

handbook, halfpage

100

200

MLB587

150

( C)

Ptot

(mW)

300

400

100

Fig.3

DC current gain as a function of collector

current; typical values.

VCE =1V.

handbook, halfpage

MBG237

110

hFE

IC (mA)

10−1

102

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