September1995

4

Philips Semiconductors

Product specification

NPN 3 GHz wideband transistor

BFS17A

Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.

L1=L3=5

µH Ferroxcube choke.

L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.

handbook, full pagewidth

MBB251

18

Ω

1.5 nF

10 k

Ω

L2

L1

1 nF

75

Ω

input

270

Ω

1 nF

L3

1.5 nF

1 nF

0.68 pF

3.3 pF

DUT

75

Ω

output

VCC

VBB

Fig.3

DC current gain as a function of

collector current.

handbook, halfpage

0

100

50

0

10

30

MEA395

20

IC (mA)

hFE

Fig.4

Collector capacitance as a function of

collector-base voltage.

handbook, halfpage

MEA903

0

1

0.5

0

4

8

12

16

VCB (V)

Cc

(pF)