DXTP5840CFDB

Document Number DS39773 Rev. 3 - 2

4 of 7

www.diodes.com

October 2019

© Diodes Incorporated

DXTP5840CFDB

Electrical Characteristics (@TA = +25°C, unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-40

—

—

V

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 8)

BVCEO

-40

—

—

V

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

—

—

V

IE = -100µA

Collector Cutoff Current

ICBO

—

—

-100

nA

VCB = -32V

Emitter Cutoff Current

IEBO

—

—

-100

nA

VEB = -7V

Collector Emitter Cutoff Current

ICES

—

—

-100

nA

VCES = -32V

Static Forward Current Transfer Ratio (Note 8)

hFE

250

400

—

—

IC = -10mA, VCE = -2V

240

350

—

IC = -500mA, VCE = -2V

220

330

—

IC = -1A, VCE = -2V

180

280

—

IC = -2A, VCE = -2V

150

240

—

IC = -3A, VCE = -2V

Collector-Emitter Saturation Voltage (Note 8)

VCE(sat)

—

-10

-15

mV

IC = -0.1A, IB = -10mA

—

-37

-80

IC = -1A, IB = -100mA

—

-100

-130

IC = -1A, IB = -10mA

—

-190

-230

IC = -2A, IB = -20mA

—

-310

-370

IC = -3A, IB = -30mA

—

-115

-260

IC = -4A, IB = -400mA

Base-Emitter Turn-On Voltage (Note 8)

VBE(on)

—

-0.8

-0.9

V

IC = -2A, VCE = -2V

Base-Emitter Saturation Voltage (Note 8)

VBE(sat)

—

-0.76

-0.9

V

IC = -1A, IB = -10mA

Output Capacitance

Cobo

—

65

—

pF

VCB = -3V, f = 1MHz

Transition Frequency

fT

—

135

—

MHz

VCE = -5V, IC = -100mA,

f = 100MHz

Delay Time

td

—

105

—

ns

VCC = -30V, IC = -750mA

IB1 = -IB2 = -15mA

Rise Time

tr

—

125

—

Turn-On Time

ton

—

230

—

Storage Time

ts

—

265

—

Fall Time

tf

—

95

—

Turn-Off Time

toff

—

360

—

Note:

8. Measured under pulse

d conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.