DXTP5860CFDB

Document Number DS42253 Rev. 2 - 2

4 of 7

www.diodes.com

November 2019

© Diodes Incorporated

DXTP5860CFDB

Electrical Characteristics (@TA = +25°C, unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-60

—

—

V

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 8)

BVCEO

-60

—

—

V

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

—

—

V

IE = -100µA

Collector Cutoff Current

ICBO

—

—

-100

nA

VCB = -48V

Emitter Cutoff Current

IEBO

—

—

-100

nA

VEB = -6V

Collector Emitter Cutoff Current

ICES

—

—

-100

nA

VCES = -48V

Static Forward Current Transfer Ratio (Note 8)

hFE

170

220

—

—

IC = -500mA, VCE = -2V

160

205

—

IC = -1A, VCE = -2V

140

180

—

IC = -2A, VCE = -2V

50

100

—

IC = -5A, VCE = -2V

Collector-Emitter Saturation Voltage (Note 8)

VCE(sat)

—

-40

-55

mV

IC = -0.5A, IB = -50mA

—

-65

-105

IC = -1A, IB = -50mA

—

-175

-230

IC = -1A, IB = -10mA

—

-155

-300

IC = -4A, IB = -400mA

—

-355

-450

IC = -5A, IB = -250mA

Base-Emitter Turn-On Voltage (Note 8)

VBE(on)

—

-0.75

-0.9

V

IC = -2A, VCE = -2V

Base-Emitter Saturation Voltage (Note 8)

VBE(sat)

—

-0.75

-0.9

V

IC = -1A, IB = -10mA

—

-0.95

-1.1

IC = -5A, IB = -250mA

Output Capacitance

Cobo

—

65

80

pF

VCB = -10V, f = 1MHz

Transition Frequency

fT

—

130

—

MHz

VCE = -10V, IC = -100mA,

f = 100MHz

Delay Time

td

—

26

—

ns

VCC = -9V, IC = -2A

IB1 = -IB2 = -0.1A

Rise Time

tr

—

54

—

Turn-On Time

ton

—

80

—

Storage Time

ts

—

205

—

Fall Time

tf

—

35

—

Turn-Off Time

toff

—

240

—

Note:

8. Measured under pulsed conditions. Pulse

width ≤ 300 µs. Duty cycle ≤ 2%.