DXTP58100CFDB

Document number: DS42254 Rev. 2 - 2

4 of 7

www.diodes.com

November 2019

© Diodes Incorporated

DXTP58100CFDB

Electrical Characteristics (@TA = +25°C, unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-100

—

—

V

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 8)

BVCEO

-100

—

—

V

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

—

—

V

IE = -100µA

Collector Cutoff Current

ICBO

—

—

-100

nA

VCB = -80V

Emitter Cutoff Current

IEBO

—

—

-100

nA

VEB = -6V

Collector Emitter Cutoff Current

ICES

—

—

-100

nA

VCES = -80V

Static Forward Current Transfer Ratio (Note 8)

hFE

160

260

—

—

IC = -500mA, VCE = -2V

150

240

—

IC = -1A, VCE = -2V

90

180

—

IC = -2A, VCE = -2V

15

60

—

IC = -3A, VCE = -2V

Collector-Emitter Saturation Voltage (Note 8)

VCE(sat)

—

-45

-70

mV

IC = -0.5A, IB = -50mA

—

-95

-150

IC = -1A, IB = -50mA

—

-125

-185

IC = -2A, IB = -200mA

Base-Emitter Turn-On Voltage (Note 8)

VBE(on)

—

-0.75

-0.9

V

IC = -2A, VCE = -2V

Base-Emitter Saturation Voltage (Note 8)

VBE(sat)

—

-0.75

-0.9

V

IC = -1A, IB = -10mA

Output Capacitance

Cobo

—

30

—

pF

VCB = -10V, f = 1MHz

Transition Frequency

fT

—

135

—

MHz

VCE = -10V, IC = -100mA,

f = 100MHz

Delay Time

td

—

15

—

ns

VCC = -9V, IC = -2A

IB1 = -IB2 = -0.1A

Rise Time

tr

—

60

—

Turn-On Time

ton

—

75

—

Storage Time

ts

—

485

—

Fall Time

tf

—

155

—

Turn-Off Time

toff

—

640

—

Note:

8. Measured under

pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.