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ICS650-40 датащи(PDF) 3 Page - Renesas Technology Corp

номер детали ICS650-40
подробное описание детали  ETHERNET SWITCH CLOCK SOURCE
PDF  8 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ICS650-40 датащи(HTML) 3 Page - Renesas Technology Corp

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ICS650-40
ETHERNET SWITCH CLOCK SOURCE
CLOCK SYNTHESIZER
IDT™ / ICS™ ETHERNET SWITCH CLOCK SOURCE
3
ICS650-40
REV E 051310
External Components
A minimum number of external components are required for proper operation. Decoupling capacitors of 0.01
µF
should be connected between VDD and GND pairs. The capacitors should be placed between pins VDD and GND,
and VDDO and GND, as close to the device as possible. A 33
Ω series terminating resistor should be used on each
clock output if the trace is longer than 1 inch. A 25 MHz fundamental mode parallel resonant crystal should be used
with CL=18 pF.
On chip capacitors. On Chip capacitors are used for a 18 pF load crystal. Small 2 to 3 pf trimming capacitors are
used from pins X1 to ground and X2 to ground to optimize the initial accuracy.
Absolute Maximum Ratings
Stresses above the ratings listed below can cause permanent damage to the ICS650-40. These ratings, which are
standard values for IDT commercially rated parts, are stress ratings only. Functional operation of the device at these
or any other conditions above those indicated in the operational sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods can affect product reliability. Electrical
parameters are guaranteed only over the recommended operating temperature range.
Recommended Operation Conditions
Item
Rating
Supply Voltage, VDD
7 V
All Inputs and Outputs
-0.5 V to VDD+0.5 V
Ambient Operating Temperature
0 to +70
° C
Storage Temperature
-65 to +150
° C
Junction Temperature
125
° C
Soldering Temperature
260
° C
Parameter
Min.
Typ.
Max.
Units
Ambient Operating Temperature
0
+70
° C
Power Supply Voltage (measured in respect to GND)
+3.15
+3.45
V



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