DMTH6016LFVWQ

Document number: DS39906 Rev. 4 - 2

2 of 7

www.diodes.com

September 2018

© Diodes Incorporated

DMTH6016LFVWQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 8) VGS = 10V

TC = +25°C

TC = +100°C

ID

41

29

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

160

A

Maximum Continuous Body Diode Forward Current (Note 8)

IS

33

A

Pulsed Body Diode Forward Current (Note 8)

ISM

160

A

Avalanche Current, L = 0.1mH (Note 9)

IAS

16

A

Avalanche Energy, L = 0.1mH (Note 9)

EAS

12.8

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

PD

1.17

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

128

°C/W

Total Power Dissipation (Note 7)

PD

2.38

W

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

RJA

63

°C/W

Thermal Resistance, Junction to Case (Note 8)

RJC

3.7

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 10)

Drain-Source Breakdown Voltage

BVDSS

60

—

—

V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS = 48V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 10)

Gate Threshold Voltage

VGS(TH)

1

—

2.5

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

12.3

16

m

Ω

VGS = 10V, ID = 20A

—

20.3

27

VGS = 4.5V, ID = 18A

Diode Forward Voltage

VSD

—

0.7

1.2

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 11)

Input Capacitance

Ciss

—

939

—

pF

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

270

—

Reverse Transfer Capacitance

Crss

—

23.4

—

Gate Resistance

RG

—

1.4

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

7.3

—

nC



VDS = 30V, ID = 10A

Total Gate Charge (VGS = 10V)

Qg

—

15.1

—

Gate-Source Charge

Qgs

—

2.5

—

Gate-Drain Charge

Qgd

—

3.5

—

Turn-On Delay Time

tD(ON)

—

3.9

—

ns

VGS = 10V, VDS = 30V,

RG = 6Ω, ID = 10A

Turn-On Rise Time

tR

—

6.3

—

Turn-Off Delay Time

tD(OFF)

—

14.3

—

Turn-Off Fall Time

tF

—

5.9

—

Reverse Recovery Time

tRR

—

22

—

ns

IF = 10A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

12

—

nC

Notes:

6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

8. Thermal resistance from junction to soldering point (on the exposed drain pad).

9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

10. Short duration pulse test used to minimize self-heating effect.

11. Guaranteed by design. Not subject to product testing.