DMTH46M7SFVWQ

Document number: DS41951 Rev. 4 - 2

2 of 7

www.diodes.com

November 2022

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DMTH46M7SFVWQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

40

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6), VGS = 10V

TC = +25

C

ID

67.2

A

TC = +100

C

47.5

Continuous Drain Current (Note 5), VGS = 10V

TA = +25

C

ID

16.3

A

TA = +100

C

11.5

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

260

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

65

A

Pulsed Body Diode Forward Current (10

μs Pulse, Duty Cycle = 1%)

ISM

260

A

Avalanche Current, L = 0.1mH

IAS

26.6

A

Avalanche Energy, L = 0.1mH

EAS

35.3

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

3.2

W

Thermal Resistance, Junction to Ambient (Note 5)

RJA

46.8

°C/W

Total Power Dissipation (Note 6)

TC = +25°C

PD

54.5

W

Thermal Resistance, Junction to Case (Note 6)

RJC

2.75

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

40

—

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

—

1

μA

VDS = 32V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

2

—

4

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

5.7

7.4

m

Ω

VGS = 10V, ID = 20A

Diode Forward Voltage

VSD

—

0.9

1.2

V

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

1315

—

pF

VDS = 20V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

517

—

Reverse Transfer Capacitance

Crss

—

30.9

—

Gate Resistance

Rg

—

1.13

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

Qg

—

14.8

—

nC

VDS = 20V, ID = 20A, VGS = 10V

Gate-Source Charge

Qgs

—

1.9

—

Gate-Drain Charge

Qgd

—

5.2

—

Turn-On Delay Time

tD(ON)

—

8.67

—

ns

VDD = 20V, VGS = 10V,

Rg = 3Ω, ID = 20A

Turn-On Rise Time

tR

—

16.1

—

Turn-Off Delay Time

tD(OFF)

—

15.9

—

Turn-Off Fall Time

tF

—

9.07

—

Body Diode Reverse Recovery Time

tRR

—

105

—

ns

IF = 20A, di/dt = 300A/μs

Body Diode Reverse Recovery Charge

QRR

—

229

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.