1.

Product profile

1.1 General description

Single high-speed switching diode, fabricated in planar technology, and encapsulated in a

small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.

1.2 Features and benefits

High switching speed: trr ≤ 4ns

Reverse voltage: VR ≤ 75 V

Repetitive peak reverse voltage: VRRM ≤ 100 V

Repetitive peak forward current: IFRM ≤ 450 mA

Small hermetically sealed glass SMD package

1.3 Applications

High-speed switching

Reverse polarity protection

1.4 Quick reference data

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA.

BAS32L

High-speed switching diode

Rev. 7 — 20 January 2011

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF

forward current

[1] --

200

mA

IFRM

repetitive peak forward

current

--

450

mA

VR

reverse voltage

-

-

75

V

VF

forward voltage

IF = 100 mA

-

-

1000

mV

trr

reverse recovery time

[2] --

4

ns