2003 Mar 25

2

NXP Semiconductors

Product data sheet

Low-voltage stabistor

BAS17

FEATURES

• Low-voltage stabilization

• Forward voltage range: 580 to 960 mV

• Total power dissipation: max. 250 mW.

APPLICATIONS

• Low-voltage stabilization e.g.

– Bias stabilizer in class-B output stages

– Clipping

– Clamping

– Meter protection.

DESCRIPTION

Low-voltage stabilization diode in a small SOT23 plastic

package.

PINNING

PIN

DESCRIPTION

1

anode

2

not connected

3

cathode

Fig.1

Simplified outline (SOT23),

pin configuration and symbol.

handbook, halfpage

21

3

MAM185

2

n.c.

1

3

MARKING

Note

1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

∗ = W : Made in China.

TYPE NUMBER

MARKING CODE(1)

BAS17

∗A9

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VR

continuous reverse voltage

−

5

V

IF

continuous forward current

−

200

mA

Ptot

total power dissipation

Tamb = 25 °C

−

250

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C